AP40P04DF Datasheet. Specs and Replacement

Type Designator: AP40P04DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: PDFN3X3-8L

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AP40P04DF datasheet

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AP40P04DF

AP40P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R ... See More ⇒

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AP40P04DF

AP40P04D -40V P-Channel Enhancement Mode MOSFET Description The AP40P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R ... See More ⇒

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AP40P04DF

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AP40P04DF

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Detailed specifications: AP30P03D, AP40N02D, AP40N03S, AP40N10P, AP40N20MP, AP40P02D, AP40P03DF, AP40P04D, IRFP450, AP40P04NF, AP5P04MI, AP5P06MSI, AP60N02D, AP60N02DF, AP60N02NF, AP60N03D, AP60N03DF

Keywords - AP40P04DF MOSFET specs

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