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AP40P04DF Spec and Replacement


   Type Designator: AP40P04DF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: PDFN3X3-8L

 AP40P04DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP40P04DF Specs

 ..1. Size:1350K  cn apm
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AP40P04DF

AP40P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R ... See More ⇒

 6.1. Size:1441K  cn apm
 ap40p04d.pdf pdf_icon

AP40P04DF

AP40P04D -40V P-Channel Enhancement Mode MOSFET Description The AP40P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R ... See More ⇒

 7.1. Size:606K  allpower
 ap40p04g.pdf pdf_icon

AP40P04DF

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 7.2. Size:638K  allpower
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AP40P04DF

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Detailed specifications: AP30P03D , AP40N02D , AP40N03S , AP40N10P , AP40N20MP , AP40P02D , AP40P03DF , AP40P04D , IRFP450 , AP40P04NF , AP5P04MI , AP5P06MSI , AP60N02D , AP60N02DF , AP60N02NF , AP60N03D , AP60N03DF .

History: UPA2731T1A | UPA2731UT1A | JMSH0601ATL

Keywords - AP40P04DF MOSFET specs

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