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AP5P04MI Spec and Replacement


   Type Designator: AP5P04MI
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23

 AP5P04MI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP5P04MI Specs

 ..1. Size:1491K  cn apm
 ap5p04mi.pdf pdf_icon

AP5P04MI

AP5P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP5P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-5.0A DS D R ... See More ⇒

 9.1. Size:1402K  cn apm
 ap5p06msi.pdf pdf_icon

AP5P04MI

AP5P06MSI -60V P-Channel Enhancement Mode MOSFET Description The AP5P06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-5A DS D R ... See More ⇒

Detailed specifications: AP40N03S , AP40N10P , AP40N20MP , AP40P02D , AP40P03DF , AP40P04D , AP40P04DF , AP40P04NF , AO4407 , AP5P06MSI , AP60N02D , AP60N02DF , AP60N02NF , AP60N03D , AP60N03DF , AP60N03NF , AP60N03Y .

History: HGK110N20S

Keywords - AP5P04MI MOSFET specs

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