AP5P04MI Datasheet. Specs and Replacement
Type Designator: AP5P04MI 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT23
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AP5P04MI datasheet
ap5p04mi.pdf
AP5P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP5P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-5.0A DS D R ... See More ⇒
ap5p06msi.pdf
AP5P06MSI -60V P-Channel Enhancement Mode MOSFET Description The AP5P06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-5A DS D R ... See More ⇒
Detailed specifications: AP40N03S, AP40N10P, AP40N20MP, AP40P02D, AP40P03DF, AP40P04D, AP40P04DF, AP40P04NF, AO4407, AP5P06MSI, AP60N02D, AP60N02DF, AP60N02NF, AP60N03D, AP60N03DF, AP60N03NF, AP60N03Y
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