AGM30P20S PDF and Equivalents Search

 

AGM30P20S Specs and Replacement


   Type Designator: AGM30P20S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
 

 AGM30P20S substitution

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AGM30P20S datasheet

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AGM30P20S

AGM30P20S General Description Product Summary The AGM30P20S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -30V 15.5m -11A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize co... See More ⇒

 6.1. Size:1162K  cn agmsemi
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AGM30P20S

AGM30P20M Characteristics Curve Typ. output characteristics Typ. drain-source on resistance -I =f(-V ) R =f(-I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance -I =f(-V ) R = f(T ); I =-8A; V =-10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.7 AGM30P20M Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-2... See More ⇒

 6.2. Size:1429K  cn agmsemi
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AGM30P20S

AGM30P20D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -30 -- -- V GS D Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage ... See More ⇒

 6.3. Size:1147K  cn agmsemi
agm30p20ap.pdf pdf_icon

AGM30P20S

AGM30P20AP Characteristics Curve www.agm-mos.com 3 VER2.68 AGM30P20AP Figure7 Safe Operation Area Figure8 Normalized Maximum Transient Thermal Impedance www.agm-mos.com 4 VER2.68 AGM30P20AP Dimensions PDFN3.3*3.3 MILLIMETER D SYMBOL MIN Typ. MAX A 0.700 0.800 0.900 b A1 0.152REF. A2 0 0.05 D 3.000 3.100 3.200 D1 2.300 2.450 2.600 D1 E 2.900 3.000 3.100 E1 3.1... See More ⇒

Detailed specifications: AGMH6035D , AGMH603H , AGM628AP , AGM628D , AGM628DM1 , AGM1095M , AGM1099EL , AGM12T08C , IRFZ46N , AGM30P25AP , AGM30P25D , AGM30P25M , AGM30P25MBP , AGM30P25MBQ , AGM30P25S , AGM30P35AP , AGM30P35D .

History: DH100P30 | AGM042N10D

Keywords - AGM30P20S MOSFET specs

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