AGM30P25AP Datasheet. Specs and Replacement

Type Designator: AGM30P25AP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 102 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: PDFN3.3X3.3

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AGM30P25AP datasheet

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AGM30P25AP

AGM30P25AP Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -30 -- -- V Zero Gate Voltage Drain Current V =-30V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V ... See More ⇒

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AGM30P25AP

AGM30P25MBP General Description The AGM30P25MBP combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery -30V 20m -8A protection applications. Features PDFN3*3 Pin Configuration Advance high cell density Trench technology R to minimize c... See More ⇒

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AGM30P25AP

AGM30P25S Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; V =-10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.5 AGM30P25S Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA TH... See More ⇒

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AGM30P25AP

AGM30P25MBQ Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -30 -- -- V Zero Gate Voltage Drain Current V =-30V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V... See More ⇒

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Detailed specifications: AGMH603H, AGM628AP, AGM628D, AGM628DM1, AGM1095M, AGM1099EL, AGM12T08C, AGM30P20S, FTP08N06A, AGM30P25D, AGM30P25M, AGM30P25MBP, AGM30P25MBQ, AGM30P25S, AGM30P35AP, AGM30P35D, AGM30P35M

Keywords - AGM30P25AP MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs