AGM30P25AP MOSFET Datasheet: P-Ch, 30V, 10A. Full specification with pinout and replacement list

AGM30P25AP Specs and Replacement

   Type Designator: AGM30P25AP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 102 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: PDFN3.3X3.3

AGM30P25AP substitution

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AGM30P25AP datasheet

..1. Size:1692K cn agmsemi
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AGM30P25AP Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -30 -- -- V Zero Gate Voltage Drain Current V =-30V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V ... See More ⇒

6.1. Size:1806K cn agmsemi
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AGM30P25MBP General Description The AGM30P25MBP combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery -30V 20m -8A protection applications. Features PDFN3*3 Pin Configuration Advance high cell density Trench technology R to minimize c... See More ⇒

6.2. Size:1501K cn agmsemi
agm30p25s.pdf pdf_icon

AGM30P25S Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; V =-10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.5 AGM30P25S Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA TH... See More ⇒

6.3. Size:1755K cn agmsemi
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AGM30P25MBQ Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -30 -- -- V Zero Gate Voltage Drain Current V =-30V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V... See More ⇒