BSN20 Specs and Replacement

Type Designator: BSN20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 21.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: SOT23

BSN20 substitution

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BSN20 datasheet

 ..1. Size:316K  philips
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BSN20

BSN20 N-channel enhancement mode field-effect transistor Rev. 03 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSN20 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3. A... See More ⇒

 ..2. Size:178K  diodes
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BSN20

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 ..3. Size:1311K  kexin
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BSN20

SMD Type MOSFET N-Channel MOSFET BSN20 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features Features 3 TrenchMOS technology Very fast switching Logic level compatible 1 2 Subminiature surface mount package. +0.1 d +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Gate g 2.Source 3.Drain s Absolute Maximum Ratings Ta = 25 Parameter Symbol... See More ⇒

 ..4. Size:1580K  slkor
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BSN20

BSN20 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 300mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage Applications ... See More ⇒

Detailed specifications: STU442S, 2N7002E, STU441S, STU446S, 2N7002VAC, 2N7002VC, STU438S, BS870, IRF640, BSS138DW, STU438A, DMB53D0UDW, DMB53D0UV, DMB54D0UDW, DMB54D0UV, DMG1026UV, DMN4009LK3

Keywords - BSN20 MOSFET specs

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