BSN20N-channel enhancement mode field-effect transistorRev. 03 26 June 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSN20 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.3. A

BSN20N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Low Input Capacitance 1.8 @ VGS = 10V 500mA Fast Switching Speed 50V 2.0 @ VGS = 4.5V 450mA Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green

SMD Type MOSFETN-Channel MOSFETBSN20SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features Features3TrenchMOS technology Very fast switching Logic level compatible1 2Subminiature surface mount package. +0.1d +0.050.95-0.1 0.1-0.01+0.11.9-0.11.Gateg2.Source3.Drains Absolute Maximum Ratings Ta = 25ParameterSymbol

BSN20N-Channel Enhancement Mode Field Effect TransistorProduct Summary V 50VDS I 300mAD R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output LeakageApplications

BSN20N-Channel Enhancement-Mode MOSFETDescription and Applications This new generation MOSFET has been designed to minimize the on-) and yet maintain superior switching state resistance (RDS(on)performance, making it ideal for high efficiency power management applications. SOT23 D Power management functions DC-DC ConvertersG S BacklightingTop View

BSN20www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

DISCRETE SEMICONDUCTORSDATA SHEETBSN205; BSN205AN-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSN205; BSN205AD-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max.

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BSN20WN-channel enhancement modevertical D-MOS transistorProduct specification 2000 Mar 10Supersedes data of 1997 Jun 20Philips Semiconductors Product specificationN-channel enhancement modeBSN20Wvertical D-MOS transistorFEATURES PINNING - SOT323 Direct interface to C-MOS, TTL, etc.PIN SYMBOL DESCRIPTION

BSN20BK60 V, N-channel Trench MOSFET18 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc

BSN20N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 1.8 @ VGS = 10V 500mA Low Input/Output Leakage 50V Lead Free By Design/RoHS Compliant (Note 1) 2.0 @ VGS = 4.5V 450mA "Green" Device (Note 2) Qualified to AEC-Q1