AGM1099S Datasheet. Specs and Replacement

Type Designator: AGM1099S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOP8

  📄📄 Copy 

AGM1099S substitution

- MOSFET ⓘ Cross-Reference Search

 

AGM1099S datasheet

 ..1. Size:1510K  cn agmsemi
 agm1099s.pdf pdf_icon

AGM1099S

AGM1099S General Description Product Summary The AGM1099S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 7.0A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimi... See More ⇒

 7.1. Size:1646K  cn agmsemi
 agm1099e.pdf pdf_icon

AGM1099S

AGM1099E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage ... See More ⇒

 7.2. Size:1291K  cn agmsemi
 agm1099ey.pdf pdf_icon

AGM1099S

AGM1099EY General Description Product Summary The AGM1099EY combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 92m 5.0A Features Advance high cell density Trench technology SOT89-3 Pin Configuration Low R to mi... See More ⇒

 7.3. Size:1137K  cn agmsemi
 agm1099el.pdf pdf_icon

AGM1099S

AGM1099EL General Description Product Summary The AGM1099EL combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 5.0A Features Advance high cell density Trench technology SOT-23 Pin Configuration Low R to mi... See More ⇒

SHOW MORE

Detailed specifications: AGM1075MN, AGM1075MNA, AGM1075S, AGM1095MAP, AGM1095MN, AGM1099D, AGM1099E, AGM1099EY, IRFP250N, AGM10N15D, AGM042N10D, AGM056N08C, AGM056N10A, AGM056N10C, AGM056N10H, AGM065N10C, AGM065N10D

Keywords - AGM1099S MOSFET specs

 AGM1099S cross reference

 AGM1099S equivalent finder

 AGM1099S pdf lookup

 AGM1099S substitution

 AGM1099S replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.