AGM08T15C MOSFET Datasheet: N-Ch, 150V, 150A. Full specification with pinout and replacement list

AGM08T15C Specs and Replacement

   Type Designator: AGM08T15C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 305 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 205 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: TO220

AGM08T15C substitution

- MOSFET ⓘ Cross-Reference Search

AGM08T15C datasheet

..1. Size:1082K cn agmsemi
agm08t15c.pdf pdf_icon

AGM08T15C General Description Product Summary The AGM08T15C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 150V 5.5m 150A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mi... See More ⇒

9.1. Size:786K cn agmsemi
agm085n10c.pdf pdf_icon

AGM085N10C General Description Product Summary The AGM085N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 100V 8.0m 80A Features Advance high cell density Trench technology TO-220C Pin Configuration Low R to m... See More ⇒

9.2. Size:1484K cn agmsemi
agm085n10c1.pdf pdf_icon

AGM085N10C1 Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.82 AGM085N10C1 Figure 7. Normalize... See More ⇒

9.3. Size:1268K cn agmsemi
agm085n10f.pdf pdf_icon

AGM085N10F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V... See More ⇒

Detailed specifications: AGM056N10A , AGM056N10C , AGM056N10H , AGM065N10C , AGM065N10D , AGM085N10C , AGM085N10C1 , AGM085N10F , 4435 , AGM1010A2 , AGM1010A-E , AGM1010A-F , AGM1030MA , AGM10N15R , AGM10N65F , AGM12N10A , AGM12N10AP .