AGM1010A-F Datasheet and Replacement

AGM1010A-FTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter ConditionsMin Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250AGS D100 -- -- VZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltag

AGM1010A-ETYPICAL ELECTRICAL AND THERMAL CHARACTERISTICSVDS90%10%VGSTd(on) Tr Td(off) TfTon ToffFig.7 Switching Time Waveform Fig.8 Gate Charge Waveform www.agm-mos.com 4 VER2.72AGM1010A-EPDFN5*6 Marking Instructions:Model1:Model2:www.agm-mos.com 6 VER2.72AGM1010A-EDisclaimer:The information provided in this document is believed to be accurate and relia

AGM1010A2Table 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 100 -- -- VGS DDSSZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage

AGM1095MN General DescriptionProduct SummaryThe AGM1095MN combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and battery protectionapplications.100V 95m 6.8A FeaturesSOP8 Pin Configuration Advance high cell density Trench technologyLow R to minimize cond

AGM1075MBP General DescriptionThe AGM1075MBP combines advanced trenchProduct SummarytoMOSFET technology with a low resistance packageprovide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features100V 65m 12AAdvance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration Low R to

AGM1075-GTypical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71AGM1075-GSOT23-3Marking Inst

AGM1075D General DescriptionProduct SummaryThe AGM1075D combines advanced trenchtoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.100V 55m 16A FeaturesTO-252 Pin Configuration Advance high cell density Trench technologyLow R to minimize cond

AGM1030MATable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 100 -- -- VGS DDSSZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold

AGM1099ETable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 100 -- -- VGS DDSSZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage

AGM1095MAP General DescriptionThe AGM1095MAP combines advanced trenchProduct SummaryMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDdevice isThis ideal for load switch and battery100V 96m 7Aprotection applications. Features-100V 220m -6A Advance high cell density Trench technologyPDFN3.3*3.3 Pin Configurat

AGM10N65FTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter ConditionsMin Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250AGS D650 -- -- VZero Gate Voltage Drain Current V =650V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =30V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage

AGM10N15D General DescriptionTheAGM10N15D combines advanced trench MOSFETto providetechnology with a low resistance package Product Summaryextremely low RDS(ON)This device is ideal and batteryfor load switchprotection applications.BVDSS RDSON ID Features150V 196m 8.6A Advance high cell density Trench technologyLow R to minimize conductive loss DS(ON)

AGM1099EY General DescriptionProduct SummaryThe AGM1099EY combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 92m 5.0A FeaturesAdvance high cell density Trench technologySOT89-3 Pin ConfigurationLow R to mi

AGM1075MNATypical Characteristics (TJ =25 Noted) www.agm-mos.com 3 VER2.71AGM1075MNATypical Characteristics (TJ =25 Noted)www.agm-mos.com 4 VER2.71AGM1075MNADimensionsPDFN5*6D3DMILLIMETERSYMBOLMIN Typ. MAXA 0.900 1.000 1.100A1 0.254 REF.A2 0~0.05D 4.824 4.900 4.976D1 1.605 1.705 1.805D2 0.500 0.600 0.700D3 4.924 5.000 5.076E 5.924 6.000

AGM1095M General DescriptionProduct SummaryThe AGM1095M combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDdevice isThis ideal for load switch and battery100V 100m 7Aprotection applications.-100V 240m -6A FeaturesSOP8 Pin Configuration Advance high cell density Trench technologyR to

AGM1099EL General DescriptionProduct SummaryThe AGM1099EL combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 100m 5.0A FeaturesAdvance high cell density Trench technologySOT-23 Pin ConfigurationLow R to mi

AGM1075S General DescriptionProduct SummaryThe AGM1075S combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)device is idealThis for load switch and battery BVDSS RDSON IDprotection applications.100V 62m 10A FeaturesAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimize

AGM1099S General DescriptionProduct SummaryThe AGM1099S combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 100m 7.0A FeaturesAdvance high cell density Trench technologySOP8 Pin ConfigurationLow R to minimi

AGM1099DCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistanceI =f(V ) R =f(T );I =6A; V =10VD GS DS(on) j D GSwww.agm-mos.com 3 VER2.73AGM1099DGate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH j D BR

AGM1030MBP General DescriptionProduct SummaryThe AGM1030MBP combines advanced trenchtoMOSFET technology with a low resistance packageprovide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.100V 26m 20A FeaturesAdvance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration Low R t

AGM1075MNTest Circuit 1EAS test circuit 2Gate charge test circuit 3Switch Time Test Circuit www.agm-mos.com 3 VER2.55AGM1075MNTypical Electrical and Thermal Characteristics (curves) Figure1. Source-Drain Diode Forward Voltage Figure2. Safe operating area Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance F

AGM1030MNATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 100 -- -- VGS DDSSZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltag

AGM10N15R General DescriptionProduct SummaryTheAGM10N15R combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)This device is ideal and battery BVDSS RDSON IDfor load switchprotection applications.150V 245m 8.2A Features Advance high cell density Trench technologySOT-223 Pin ConfigurationLow R to minimize c