AGM12N10AP Datasheet. Specs and Replacement

Type Designator: AGM12N10AP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: PDFN3.3X3.3

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AGM12N10AP datasheet

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AGM12N10AP

AGM12N10AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1.0 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Volt... See More ⇒

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AGM12N10AP

AGM12N10A Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGM12N10A Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH j... See More ⇒

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AGM12N10AP

AGM12N10D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGM12N10D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH j... See More ⇒

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AGM12N10AP

AGM12N10MNA General Description Product Summary The AGM12N10MNA combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 11m 55A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to... See More ⇒

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Detailed specifications: AGM08T15C, AGM1010A2, AGM1010A-E, AGM1010A-F, AGM1030MA, AGM10N15R, AGM10N65F, AGM12N10A, IRFB3607, AGM12N10D, AGM12N10MNA, AGM12T02LL, AGM12T05A, AGM12T05C, AGM12T05F, AGM12T08A, AGM12T12A

Keywords - AGM12N10AP MOSFET specs

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