AGM12N10MNA MOSFET Datasheet: N-Ch, 100V, 55A. Full specification with pinout and replacement list

AGM12N10MNA Specs and Replacement

   Type Designator: AGM12N10MNA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 188 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: PDFN5X6

AGM12N10MNA substitution

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AGM12N10MNA datasheet

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agm12n10mna.pdf pdf_icon

AGM12N10MNA General Description Product Summary The AGM12N10MNA combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 11m 55A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to... See More ⇒

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agm12n10d.pdf pdf_icon

AGM12N10D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGM12N10D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH j... See More ⇒

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agm12n10a.pdf pdf_icon

AGM12N10A Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGM12N10A Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH j... See More ⇒

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agm12n10ap.pdf pdf_icon

AGM12N10AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1.0 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Volt... See More ⇒

Detailed specifications: AGM1010A-E , AGM1010A-F , AGM1030MA , AGM10N15R , AGM10N65F , AGM12N10A , AGM12N10AP , AGM12N10D , AON6380 , AGM12T02LL , AGM12T05A , AGM12T05C , AGM12T05F , AGM12T08A , AGM12T12A , AGM12T12C , AGM12T12D .