AGM12T02LL Specs and Replacement
Type Designator: AGM12T02LL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 380 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 230 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 870 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TOLL
AGM12T02LL substitution
AGM12T02LL datasheet
agm12t02ll.pdf
AGM12T02LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 120 -- -- V GS D DSS Zero Gate Voltage Drain Current V =120V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V... See More ⇒
agm12t08a.pdf
AGM12T08A Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 20 80 10V 6V ID=20A 4.5V 4V 15 60 125 C 10 40 3.5V 25 C 5 20 Vgs=3V 0 0 2 4 6 8 10 0 0.5 1 1.5 2 VGS (V) VDS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 15 2.2 ID=20A 2 12 1.8 VGS=10V VGS... See More ⇒
agm12t05f.pdf
AGM12T05F General Description The AGM12T05F combines advanced trench Product Summary MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 120V 5.5m 100A Advance high cell density Trench technology Low R to minimize conductive loss TO-22... See More ⇒
agm12t05c.pdf
AGM12T05C General Description Product Summary The AGM12T05C combines advanced trench MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 120V 5.5m 100A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mini... See More ⇒
Detailed specifications: AGM1010A-F , AGM1030MA , AGM10N15R , AGM10N65F , AGM12N10A , AGM12N10AP , AGM12N10D , AGM12N10MNA , IRF530 , AGM12T05A , AGM12T05C , AGM12T05F , AGM12T08A , AGM12T12A , AGM12T12C , AGM12T12D , AGM13T05A .
History: AOK66613 | JMSL1018AGQ | AOSS21115C | STF24N60DM2 | STF40N20 | AGM085N10C | JMTG100N03A
Keywords - AGM12T02LL MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AOK66613 | JMSL1018AGQ | AOSS21115C | STF24N60DM2 | STF40N20 | AGM085N10C | JMTG100N03A
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