AGM304A-B PDF and Equivalents Search

 

AGM304A-B Specs and Replacement


   Type Designator: AGM304A-B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 73.9 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: PDFN5X6
 

 AGM304A-B substitution

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AGM304A-B datasheet

 ..1. Size:1271K  cn agmsemi
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AGM304A-B

AGM304A-B TYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1 On-Region Characteristics (Note E) Figure 4 On-Resistance vs. Junction Figure 3 On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5 On-Resistance vs. Gate-Source Figure 6 Body-Diode Characteristics (Note E) Voltage (Note E) www.agm-... See More ⇒

 7.1. Size:991K  cn agmsemi
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AGM304A-B

AGM304AP General Description The AGM304AP combines advanced trench Product Summary MOSFETtechnology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 3.8m 40A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mi... See More ⇒

 7.2. Size:1312K  cn agmsemi
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AGM304A-B

AGM304A General Description Product Summary The AGM304A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 2.8m 100A Features PDFN5*6 Pin Configuration Advance high cell density Trench technology Low R to minimi... See More ⇒

 7.3. Size:972K  cn agmsemi
agm304ap-b.pdf pdf_icon

AGM304A-B

AGM304AP-B TYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1 On-Region Characteristics (Note E) Figure 4 On-Resistance vs. Junction Figure 3 On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5 On-Resistance vs. Gate-Source Figure 6 Body-Diode Characteristics (Note E) Voltage (Note E) www.agm... See More ⇒

Detailed specifications: AGM302D1 , AGM303A , AGM303AP , AGM303D , AGM303D1 , AGM303MNA , AGM3045A , AGM304A , IRFZ48N , AGM304AP , AGM304AP-B , AGM304D , AGM304MNQ , AGM304S , AGM18N20D , AGM18N20H , AGM204A .

History: AGM208D | BLF879P | DH060N07D | 2SK3977 | PHX20N06T | RFD8P06E | NTUD3169CZ

Keywords - AGM304A-B MOSFET specs

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