AGM206D Datasheet. Specs and Replacement

Type Designator: AGM206D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 236 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

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AGM206D datasheet

 ..1. Size:1342K  cn agmsemi
agm206d.pdf pdf_icon

AGM206D

AGM206D General Description Product Summary The AGM206D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 20V 4.5m 85A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize c... See More ⇒

 8.1. Size:1061K  cn agmsemi
agm206map.pdf pdf_icon

AGM206D

AGM206MAP General Description The AGM206MAP combines advanced trench MOSFET technology with a low resistance package Product Summary to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features 25A 20V 6m Advance high cell density Trench technology Low R to minimize conductive loss DS(ON)... See More ⇒

 8.2. Size:1256K  cn agmsemi
agm206a.pdf pdf_icon

AGM206D

AGM206A Figure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.65 AGM206A Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.65 AGM206A PDFN5*6 Marking Instructions Model1 Model2 www.agm-mos.com 7 VER2.65 ... See More ⇒

 8.3. Size:747K  cn agmsemi
agm206mdp.pdf pdf_icon

AGM206D

AGM206MDP General Description Product Summary The AGM206MDP combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 20V 4.5m 60A Features Advance high cell density Trench technology DFN3*3 Pin Configuration Low R to minim... See More ⇒

Detailed specifications: AGM304S, AGM18N20D, AGM18N20H, AGM204A, AGM204AP, AGM205D, AGM206A, AGM206AP, IRF9640, AGM206MAP, AGM206MDP, AGM208D, AGM20N65F, AGM20P07EL, AGM20P16AS, AGM20P22AS, AGM13T15A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.