AGM13T15D Datasheet PDF and Equivalents Search

 ..1. Size:1230K  cn agmsemi
 agm13t15d.pdf

AGM13T15D General Description Product Summary The AGM13T15D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 15.5m 58A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to m... See More ⇒

 6.1. Size:1046K  cn agmsemi
 agm13t15a.pdf

AGM13T15A General Description Product Summary The AGM13T15A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 16m 58A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to mi... See More ⇒

 6.2. Size:1478K  cn agmsemi
 agm13t15c.pdf

AGM13T15C General Description Product Summary The AGM13T15C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 15.5m 58A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mi... See More ⇒

 8.1. Size:1406K  cn agmsemi
 agm13t30a.pdf

AGM13T30A Test Circuit 1) E test Circuit AS 2) Gate charge test Circuit 3) Switch Time Test Circuit www.agm-mos.com 3 VER2.55 AGM13T30A Typical Electrical and Thermal Characteristics Vds Drain-Source Voltage (V) T J-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Chara... See More ⇒

 8.2. Size:1977K  cn agmsemi
 agm13t05a.pdf

AGM13T05A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 140 GS D DSS 145 -- V Zero Gate Voltage Drain Current V =135V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltag... See More ⇒

 8.3. Size:1222K  cn agmsemi
 agm13t30d.pdf

AGM13T30D General Description Product Summary The AGM13T30D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 32.5m 30A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to m... See More ⇒