AGM13T30D Datasheet. Specs and Replacement
Type Designator: AGM13T30D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 135 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 251 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO252
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AGM13T30D substitution
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AGM13T30D datasheet
agm13t30d.pdf
AGM13T30D General Description Product Summary The AGM13T30D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 32.5m 30A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to m... See More ⇒
agm13t30a.pdf
AGM13T30A Test Circuit 1) E test Circuit AS 2) Gate charge test Circuit 3) Switch Time Test Circuit www.agm-mos.com 3 VER2.55 AGM13T30A Typical Electrical and Thermal Characteristics Vds Drain-Source Voltage (V) T J-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Chara... See More ⇒
agm13t15a.pdf
AGM13T15A General Description Product Summary The AGM13T15A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 16m 58A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to mi... See More ⇒
agm13t15d.pdf
AGM13T15D General Description Product Summary The AGM13T15D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 15.5m 58A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to m... See More ⇒
Detailed specifications: AGM20N65F, AGM20P07EL, AGM20P16AS, AGM20P22AS, AGM13T15A, AGM13T15C, AGM13T15D, AGM13T30A, 50N06, AGM1405C1, AGM1405F, AGM14N10A, AGM14N10AP, AGM14N10D, AGM150P10AP, AGM150P10D, AGM150P10S
Keywords - AGM13T30D MOSFET specs
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MOSFET Parameters. How They Affect Each Other
History: IXFH74N20P | APTM100A13SCG | FQU5P20 | STF8810 | QM03N65D | PHB45NQ15T | PMZ130UNE
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