AGM1405F PDF and Equivalents Search

 

AGM1405F Specs and Replacement


   Type Designator: AGM1405F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 1.7 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO220F
 

 AGM1405F substitution

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AGM1405F datasheet

 ..1. Size:1320K  cn agmsemi
agm1405f.pdf pdf_icon

AGM1405F

AGM1405F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V =V... See More ⇒

 7.1. Size:1771K  cn agmsemi
agm1405c1.pdf pdf_icon

AGM1405F

AGM1405C1 General Description The AGM1405C1 combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 40V 3.2m 130A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to min... See More ⇒

 9.1. Size:1104K  cn agmsemi
agm14n10d.pdf pdf_icon

AGM1405F

AGM14N10D General Description The AGM14N10D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 100V 12m 50A Advance high cell density Trench technology TO-252 Pin Configuration Low R to mini... See More ⇒

 9.2. Size:1125K  cn agmsemi
agm14n10ap.pdf pdf_icon

AGM1405F

AGM14N10AP Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM14N10AP PDFN3.3*3.3 Markin... See More ⇒

Detailed specifications: AGM20P16AS , AGM20P22AS , AGM13T15A , AGM13T15C , AGM13T15D , AGM13T30A , AGM13T30D , AGM1405C1 , IRF640 , AGM14N10A , AGM14N10AP , AGM14N10D , AGM150P10AP , AGM150P10D , AGM150P10S , AGM15N10AP , AGM15N10D .

History: KF5N50FS | AGM306AP

Keywords - AGM1405F MOSFET specs

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