AGM15N10D Datasheet and Replacement

AGM15N10D General DescriptionProduct SummaryThe AGM15N10D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)This device is ideal and batteryfor load switchBVDSS RDSON IDprotection applications. Features100V 85m 15A Advance high cell density Trench technologyTO-252 Pin ConfigurationLow R to minimize co

AGM15N10D-G General DescriptionProduct SummaryThe AGM15N10D-G combines advanced trenchtoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and battery protectionapplications.100V 68m 16A Features Advance high cell density Trench technologyTO-252 Pin ConfigurationLow R to minimiz

AGM15N10AP General DescriptionProduct SummaryThe AGM15N10AP combines advanced trenchtoMOSFET technology with a low resistance packageprovide extremely low R .DS(ON)This device is ideal load switch and battery protectionforBVDSS RDSON IDapplications. Features 100V 85m 12AAdvance high cell density Trench technologyPDFN3.3*3.3 Pin ConfigurationLow R

AGM15T16DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter ConditionsMin Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250AGS D150 -- -- VZero Gate Voltage Drain Current V =150V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage

AGM150P10SGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-250uA TH j D BR(DSS) j DTyp. gate charge Typ. capacitances -V =f(Q ) ; I =-5A C =f(-V ); V =0V; f =1MHz GS g D DS GSwww.agm-mos.com 3 VER2.65AGM150P10SMax. transient thermal impedance Z =f(t ) thJC pwww.agm-mos.com 5 VER2.65AGM150P10STest Circuit and Waveform:

AGM15P13ECharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; D GS DS(on) j DV =10V GSwww.agm-mos.com 3 VER2.6AGM15P13EGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA

AGM15T03LLFig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage6V100 8ID=20A10V5V8064.5V1256044025220Vgs=4V000 0.5 1 1.5 22 4 6 8 10VDS (V)VGS (V)Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature72.6ID=20A2.462.2VGS=10V52

AGM15T06C-BTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 140 147 -- VGS DDSSZero Gate Voltage Drain Current V =140V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Volt

AGM15P22ASTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -16 -- -- VGS DZero Gate Voltage Drain Current V =-16V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =10V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM15T16CTypical Electrical & Thermal Characteristics100 30VGS = 10VVDS = 5.0VVGS = 6.0VVGS = 8.0V80 24TJ = 125C60 18VGS = 5.5V40 12TJ = 25CVGS = 5.0V20 6VGS = 4.5V0 00 1 2 3 4 5 2 3 4 5 6 7VDS (V) VGS (V)Figure 1: Saturation Characteristics Figure 2: Transfer Characteristics17 2.5VGS = 10VID = 20A16 215 1.5VGS = 10V14 113 0.512 00

AGM150P10DGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-250uA TH j D BR(DSS) j DTyp. gate charge Typ. capacitances -V =f(Q ) ; I =-5A C =f(-V ); V =0V; f =1MHz GS g D DS GSwww.agm-mos.com 3 VER2.66AGM150P10DMax. transient thermal impedance Z =f(t ) thJC pwww.agm-mos.com 5 VER2.66AGM150P10DTest Circuit and Waveform:

AGM15P16AS General DescriptionProduct SummaryThe AGM15P16AS combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDprotectionThis device is ideal for load switch and batteryapplications.-15V 13m -7.5A Features Advance high cell density Trench technology DFN2*2 Pin ConfigurationLow R to minimize

AGM15T13ATypical Electrical and Thermal Characteristics150 150VGS = 10VVDS = 5.0V8.0VVGS = 6.0V7.0V120 120VGS = 5.5V9090TJ = 175CVGS = 5.0V6060VGS = 4.8VTJ = 25C3030VGS = 4.5V000 2 4 6 8 100 1 2 3 4 5VGS - Gate-to-Source Voltage (V)VDS - Drain-to-Source Voltage (V)Figure 2: Transfer CharacteristicsFigure 1: Output Characteristics 5

AGM15T13HTable3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 150 -- VGS DDSS--Zero Gate Voltage Drain Current V =150V,V =0V -- 1 ADS GSI --DSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V =V

AGM15T06HTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 150 -- -- VGS DZero Gate Voltage Drain Current V =150V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage V

AGM15T06LLTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 150 -- -- VGS DZero Gate Voltage Drain Current V =150V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage

AGM15P30ASTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -15 -18 -- VGS DZero Gate Voltage Drain Current V =-15V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =10V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltag

AGM15P30E General DescriptionProduct SummaryThe AGM15P30E combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDprotectionThis device is ideal for load switch and batteryapplications.-15V 34m -4.1A Features Advance high cell density Trench technology SOT-23-3 Pin ConfigurationLow R to minimize

AGM15T06TTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 150 -- -- VGS DZero Gate Voltage Drain Current V =150V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage V

AGM15T06C General DescriptionProduct SummaryThe AGM15T06C combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and battery BVDSS RDSON IDfor loadprotection applications.150V 6.5m 140A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to mi

AGM15T13DTable3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 150 -- VGS DDSS--Zero Gate Voltage Drain Current V =150V,V =0V -- 1 ADS GSI --DSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V =V

AGM15T13FTable3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 150 -- VGS DDSS--Zero Gate Voltage Drain Current V =150V,V =0V -- 1 ADS GSI --DSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V =V

AGM150P10APGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-250uA TH j D BR(DSS) j DTyp. gate charge Typ. capacitances -V =f(Q ) ; I =-5A C =f(-V ); V =0V; f =1MHz GS g D DS GSwww.agm-mos.com 3 VER2.65AGM150P10APMax. transient thermal impedance Z =f(t ) thJC pwww.agm-mos.com 5 VER2.65AGM150P10APTest Circuit and Waveform:

AGM15T05LLDiagram 6: Gate threshold voltage vs. Diagram 5: Typ. transfer characteristics Junction temperature 18 1.316 1.214 1.112 1.0125oC25oC10 0.9typ8 0.86 0.74 0.62 0.50 0.41 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 180OVGS [V] Tj [ C]V =f(T ); I =250A th j DI =f(V ); V =5V; parameter: T D GS DS jDiagram 7: On-state resistance

AGM15P13AS General DescriptionProduct SummaryThe AGM15P13AS combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDprotectionThis device is ideal for load switch and batteryapplications.-15V 12m -10A Features Advance high cell density Trench technology DFN2*2 Pin ConfigurationLow R to minimize

AGM15T13CTable3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 150 -- VGS DDSS--Zero Gate Voltage Drain Current V =150V,V =0V -- 1 ADS GSI --DSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V =V