AGM16N65F Specs and Replacement
Type Designator: AGM16N65F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 204 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220F
AGM16N65F substitution
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AGM16N65F datasheet
agm16n65f.pdf
AGM16N65F General Description Product Summary The AGM16N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 650V 0.58 16A Features Advance high cell density Trench technology TO-220F Pin Configuration Low R to m... See More ⇒
agm16n10c.pdf
AGM16N10C General Description Product Summary The AGM16N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 15m 55A Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimi... See More ⇒
agm16n10d.pdf
AGM16N10D General Description Product Summary The AGM16N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 16m 40A Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimi... See More ⇒
Detailed specifications: AGM15N10D-G, AGM15P13AS, AGM15P13E, AGM15P16AS, AGM15P22AS, AGM15P30AS, AGM15P30E, AGM15T03LL, BS170, AGM1810S, AGM18N10A, AGM18N10AP, AGM18N10I, AGM18N10MNA, AGM18N10S, AGM30P20D, AGM30P20M
Keywords - AGM16N65F MOSFET specs
AGM16N65F cross reference
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AGM16N65F substitution
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