All MOSFET. AGM16N65F Datasheet

 

AGM16N65F Datasheet and Replacement


   Type Designator: AGM16N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 204 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F
 

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AGM16N65F Datasheet (PDF)

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AGM16N65F

AGM16N65F General DescriptionProduct SummaryThe AGM16N65F combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and battery BVDSS RDSON IDfor loadprotection applications.650V 0.5816A FeaturesAdvance high cell density Trench technologyTO-220F Pin ConfigurationLow R to m

 8.1. Size:1154K  cn agmsemi
 agm16n10c.pdf pdf_icon

AGM16N65F

AGM16N10C General DescriptionProduct SummaryThe AGM16N10C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 100V 15m 55AAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to minimi

 8.2. Size:1182K  cn agmsemi
 agm16n10d.pdf pdf_icon

AGM16N65F

AGM16N10D General DescriptionProduct SummaryThe AGM16N10D combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 100V 16m 40AAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimi

Datasheet: AGM15N10D-G , AGM15P13AS , AGM15P13E , AGM15P16AS , AGM15P22AS , AGM15P30AS , AGM15P30E , AGM15T03LL , CS150N03A8 , AGM1810S , AGM18N10A , AGM18N10AP , AGM18N10I , AGM18N10MNA , AGM18N10S , , .

Keywords - AGM16N65F MOSFET datasheet

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