AGM16N65F - аналоги, параметры транзистора - Справочник транзисторов

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AGM16N65F General Description Product Summary The AGM16N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 650V 0.58 16A Features Advance high cell density Trench technology TO-220F Pin Configuration Low R to m

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AGM16N10C General Description Product Summary The AGM16N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 15m 55A Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimi

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AGM16N10D General Description Product Summary The AGM16N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 16m 40A Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimi

Другие MOSFET... AGM15N10D-G , AGM15P13AS , AGM15P13E , AGM15P16AS , AGM15P22AS , AGM15P30AS , AGM15P30E , AGM15T03LL , BS170 , AGM1810S , AGM18N10A , AGM18N10AP , AGM18N10I , AGM18N10MNA , AGM18N10S , AGM30P20D , AGM30P20M .