AGM308MAR Specs and Replacement
Type Designator: AGM308MAR
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 158 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: PDFN5X6
AGM308MAR substitution
- MOSFET ⓘ Cross-Reference Search
AGM308MAR datasheet
agm308mar.pdf
AGM308MAR Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V... See More ⇒
agm308ma.pdf
AGM308MA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold Vo... See More ⇒
agm308mn.pdf
AGM308MN General Description The AGM308MN combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features 30V 8.8m 15A Advance high cell density Trench technology Low R to minimize conductive loss DS(ON) ... See More ⇒
agm308mbp.pdf
AGM308MBP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =V... See More ⇒
Detailed specifications: AGM3015D, AGM3015H, AGM301A1, AGM301C1, AGM302A1, AGM308A, AGM308AP, AGM308MA, P55NF06, AGM308MBP, AGMH403A1, AGMH605C, AGMH606C, AGMH606H, AGMH6080H, AGMH612D, AGMH614C
Keywords - AGM308MAR MOSFET specs
AGM308MAR cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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