AGMH403A1 MOSFET Datasheet: N-Ch, 45V, 120A. Full specification with pinout and replacement list

AGMH403A1 Specs and Replacement

Type Designator: AGMH403A1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.7 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: PDFN5X6

AGMH403A1 substitution

- MOSFET ⓘ Cross-Reference Search

AGMH403A1 datasheet

..1. Size:1431K cn agmsemi
agmh403a1.pdf pdf_icon

AGMH403A1 Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform www.agm-mos.com 4 VER2.72 AGMH403A1 Figure1 Gate Charge Test Circuit & Waveform Figure 2 Resistive Switching Test Circuit & Waveforms Figure 3 Unclamped Inductive Switching... See More ⇒

8.1. Size:1183K cn agmsemi
agmh402c.pdf pdf_icon

AGMH402C General Description Product Summary The AGMH402C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 40V 2.6m 170A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mini... See More ⇒

Detailed specifications: AGM301A1, AGM301C1, AGM302A1, AGM308A, AGM308AP, AGM308MA, AGM308MAR, AGM308MBP, 7N65, AGMH605C, AGMH606C, AGMH606H, AGMH6080H, AGMH612D, AGMH614C, AGMH614D, AGMH614H