AGMS5N50D PDF and Equivalents Search

 

AGMS5N50D PDF Specs and Replacement


   Type Designator: AGMS5N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 24.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO252
 

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AGMS5N50D PDF Specs

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AGMS5N50D

AGMS5N50D General Description The AGMS5N50D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 500V 1.4 5A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimiz... See More ⇒

Detailed specifications: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF630 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - AGMS5N50D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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