AGMS5N50D PDF and Equivalents Search

 

AGMS5N50D Specs and Replacement

Type Designator: AGMS5N50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 58 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO252

AGMS5N50D substitution

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AGMS5N50D datasheet

 ..1. Size:1708K  cn agmsemi
 agms5n50d.pdf pdf_icon

AGMS5N50D

AGMS5N50D General Description The AGMS5N50D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 500V 1.4 5A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimiz... See More ⇒

Detailed specifications: AGMH614C, AGMH614D, AGMH614H, AGMH70N70C, AGMH70N70D, AGMH70N90C, AGMH70N90H, AGML315ME, 4435, AGM308MN, AGM308S, AGM308SR, AGM30P05A, AGM30P05AP, AGM30P05D, AGM30P08A, AGM30P08AP

Keywords - AGMS5N50D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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