All MOSFET. AGMS5N50D Datasheet

 

AGMS5N50D Datasheet and Replacement


   Type Designator: AGMS5N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 24.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO252
 

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AGMS5N50D Datasheet (PDF)

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AGMS5N50D

AGMS5N50D General DescriptionThe AGMS5N50D combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.500V 1.4 5A FeaturesAdvance high cell density Trench technology TO-252 Pin Configuration Low R to minimiz

Datasheet: AGMH614C , AGMH614D , AGMH614H , AGMH70N70C , AGMH70N70D , AGMH70N90C , AGMH70N90H , AGML315ME , AON7410 , , , , , , , , .

History: AGMH70N90C

Keywords - AGMS5N50D MOSFET datasheet

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