AGM308MN PDF and Equivalents Search

 

AGM308MN Specs and Replacement

Type Designator: AGM308MN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 205 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SOP8

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AGM308MN datasheet

 ..1. Size:1368K  cn agmsemi
 agm308mn.pdf pdf_icon

AGM308MN

AGM308MN General Description The AGM308MN combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features 30V 8.8m 15A Advance high cell density Trench technology Low R to minimize conductive loss DS(ON) ... See More ⇒

 7.1. Size:1694K  cn agmsemi
 agm308ma.pdf pdf_icon

AGM308MN

AGM308MA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold Vo... See More ⇒

 7.2. Size:1485K  cn agmsemi
 agm308mar.pdf pdf_icon

AGM308MN

AGM308MAR Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V... See More ⇒

 7.3. Size:1332K  cn agmsemi
 agm308mbp.pdf pdf_icon

AGM308MN

AGM308MBP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =V... See More ⇒

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Detailed specifications: AGMH614D, AGMH614H, AGMH70N70C, AGMH70N70D, AGMH70N90C, AGMH70N90H, AGML315ME, AGMS5N50D, SPP20N60C3, AGM308S, AGM308SR, AGM30P05A, AGM30P05AP, AGM30P05D, AGM30P08A, AGM30P08AP, AGM30P08D

Keywords - AGM308MN MOSFET specs

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