AGM308MN - аналоги, параметры транзистора - Справочник транзисторов

AGM308MN даташит

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AGM308MN General Description The AGM308MN combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features 30V 8.8m 15A Advance high cell density Trench technology Low R to minimize conductive loss DS(ON)

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AGM308MA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold Vo

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AGM308MAR Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V

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AGM308MBP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =V

Другие MOSFET... AGMH614D , AGMH614H , AGMH70N70C , AGMH70N70D , AGMH70N90C , AGMH70N90H , AGML315ME , AGMS5N50D , SPP20N60C3 , AGM308S , AGM308SR , AGM30P05A , AGM30P05AP , AGM30P05D , AGM30P08A , AGM30P08AP , AGM30P08D .