All MOSFET. AGM3401E Datasheet

 

AGM3401E Datasheet and Replacement


   Type Designator: AGM3401E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: SOT23
 

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AGM3401E Datasheet (PDF)

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AGM3401E

AGM3401E General DescriptionProduct SummaryThe AGM3401E combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.-30V 43.5m -4.4A FeaturesSOT23-3 Pin ConfigurationAdvance high cell density Trench technologyLow R to m

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AGM3401E

AGM3404ETable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

 8.2. Size:1777K  cn agmsemi
 agm3400el.pdf pdf_icon

AGM3401E

AGM3400ELTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =12V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

 8.3. Size:1748K  cn agmsemi
 agm3404el.pdf pdf_icon

AGM3401E

AGM3404ELTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

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Datasheet: AGM30P05D , AGM30P08A , AGM30P08AP , AGM30P08D , AGM30P100A , AGM30P100D , AGM30P10A , AGM3400EL , 2N7002 , AGM3404E , , , , , , , .

History: AGM3404E | AGM30P100A | AGM30P08D

Keywords - AGM3401E MOSFET datasheet

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