All MOSFET. AGM3404E Datasheet

 

AGM3404E Datasheet and Replacement


   Type Designator: AGM3404E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOT23
 

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AGM3404E Datasheet (PDF)

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agm3404e.pdf pdf_icon

AGM3404E

AGM3404ETable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

 0.1. Size:1748K  cn agmsemi
agm3404el.pdf pdf_icon

AGM3404E

AGM3404ELTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

 8.1. Size:1777K  cn agmsemi
agm3400el.pdf pdf_icon

AGM3404E

AGM3400ELTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =12V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

 8.2. Size:975K  cn agmsemi
agm3407e.pdf pdf_icon

AGM3404E

AGM3407ETable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =-250A -30 -- -- VGS DDSSZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltag

Datasheet: AGM30P08A , AGM30P08AP , AGM30P08D , AGM30P100A , AGM30P100D , AGM30P10A , AGM3400EL , AGM3401E , 18N50 , , , , , , , , .

History: AGM30P08D | AGM30P100A

Keywords - AGM3404E MOSFET datasheet

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