AGM3404E PDF and Equivalents Search

 

AGM3404E Specs and Replacement

Type Designator: AGM3404E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SOT23

AGM3404E substitution

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AGM3404E datasheet

 ..1. Size:1838K  cn agmsemi
 agm3404e.pdf pdf_icon

AGM3404E

AGM3404E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V ... See More ⇒

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 agm3404el.pdf pdf_icon

AGM3404E

AGM3404EL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V... See More ⇒

 8.1. Size:1777K  cn agmsemi
 agm3400el.pdf pdf_icon

AGM3404E

AGM3400EL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 12V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V... See More ⇒

 8.2. Size:975K  cn agmsemi
 agm3407e.pdf pdf_icon

AGM3404E

AGM3407E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =-250 A -30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltag... See More ⇒

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Detailed specifications: AGM30P08A, AGM30P08AP, AGM30P08D, AGM30P100A, AGM30P100D, AGM30P10A, AGM3400EL, AGM3401E, STP80NF70, AGMH022P10H, AGMH035N10A, AGMH035N10C, AGMH035N10H, AGMH03N85C, AGMH056N08A, AGMH056N08C, AGMH056N08HM1

Keywords - AGM3404E MOSFET specs

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