All MOSFET. AGM85P10D Datasheet

 

AGM85P10D Datasheet and Replacement


   Type Designator: AGM85P10D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.103 Ohm
   Package: TO252
 

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AGM85P10D Datasheet (PDF)

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AGM85P10D

AGM85P10DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -100 -121 -- VGS DZero Gate Voltage Drain Current V =-100V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Volt

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AGM85P10D

AGM85P10ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -- VGS D-100 -121Zero Gate Voltage Drain Current V =-100V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Vol

Datasheet: AGM628S , AGM655D , AGM65R380F , AGM665D , AGM665E , AGM6N20D , AGM7N65D , AGM85P10A , 5N50 , AGMH022N10H , AGMH022N10LL , , , , , , .

Keywords - AGM85P10D MOSFET datasheet

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