RM150N100HD PDF and Equivalents Search

 

RM150N100HD Specs and Replacement

Type Designator: RM150N100HD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 275 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO263

RM150N100HD substitution

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RM150N100HD datasheet

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RM150N100HD

RM150N100HD N-Channel Super Trench Power MOSFET Description The RM150N100HD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rect... See More ⇒

Detailed specifications: AGM614MNA, AGM615D, AGM615MN, AGM615MNA, FTP16N06A, HCA60R070F, HYG043N10NS2P, HYG043N10NS2B, AO3401, SLB40N26C, SLI40N26C, AGM404D, AGM404Q, AGM405A, AGM405AP1, AGM405AP2, AGM405D

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