All MOSFET. AGM406AP Datasheet

 

AGM406AP Datasheet and Replacement


   Type Designator: AGM406AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN3.3X3.3
 

 AGM406AP substitution

   - MOSFET ⓘ Cross-Reference Search

 

AGM406AP Datasheet (PDF)

 ..1. Size:986K  cn agmsemi
agm406ap.pdf pdf_icon

AGM406AP

AGM406APTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

 8.1. Size:1712K  cn agmsemi
agm406mbq.pdf pdf_icon

AGM406AP

AGM406MBQTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI 100GSSV Gate Threshold Voltage V =V ,I =2

 8.2. Size:1128K  cn agmsemi
agm406mnq.pdf pdf_icon

AGM406AP

AGM406MNQTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

 8.3. Size:1267K  cn agmsemi
agm406q.pdf pdf_icon

AGM406AP

AGM406QTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I =

Datasheet: AGM405AP1 , AGM405AP2 , AGM405D , AGM405DG , AGM405F , AGM405MBP , AGM405MNA , AGM405Q , IRF530 , AGM406MBP , AGM406MBQ , AGM406MNA , AGM406MNQ , , , , .

History: AGM405MNA | AGM405A

Keywords - AGM406AP MOSFET datasheet

 AGM406AP cross reference
 AGM406AP equivalent finder
 AGM406AP lookup
 AGM406AP substitution
 AGM406AP replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.