AGM40P25A PDF and Equivalents Search

 

AGM40P25A Specs and Replacement

Type Designator: AGM40P25A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 63.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: PDFN5X6

AGM40P25A substitution

- MOSFET ⓘ Cross-Reference Search

 

AGM40P25A datasheet

 ..1. Size:1269K  cn agmsemi
agm40p25a.pdf pdf_icon

AGM40P25A

AGM40P25A Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -40 -- -- V Zero Gate Voltage Drain Current V =-40V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V =V... See More ⇒

 0.1. Size:963K  cn agmsemi
agm40p25ap.pdf pdf_icon

AGM40P25A

AGM40P25AP Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON) www.agm-mos.com 3 VER2.7 AGM40P25AP Typical Electrical And Thermal Characteristics (Curves) Figure 7. Gat... See More ⇒

 7.1. Size:1520K  cn agmsemi
agm40p26e.pdf pdf_icon

AGM40P25A

AGM40P26E General Description Product Summary The AGM40P26E combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 36m -5.8A protection applications. SOT23-3 Pin Configuration Features Advance high cell density Trench technology Low R to minimize... See More ⇒

 7.2. Size:1612K  cn agmsemi
agm40p26ap.pdf pdf_icon

AGM40P25A

AGM40P26AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -40 -- -- V GS D Zero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage... See More ⇒

Detailed specifications: AGM408MN, AGM409A, AGM409D, AGM40P100A, AGM40P100C, AGM40P100H, AGM40P13S, AGM40P150C, IRFB31N20D, AGM40P25AP, AGM40P26AP, AGM40P26E, AGM40P26S, AGM609AP, AGM609C, AGM609D, AGM609F

Keywords - AGM40P25A MOSFET specs

 AGM40P25A cross reference

 AGM40P25A equivalent finder

 AGM40P25A pdf lookup

 AGM40P25A substitution

 AGM40P25A replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.