AGM40P25A - Даташиты. Аналоги. Основные параметры

AGM40P25ATable 2. P-Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -40 ---- VZero Gate Voltage Drain Current V =-40V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =20V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V =V

AGM40P25AP Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON)www.agm-mos.com 3 VER2.7AGM40P25APTypical Electrical And Thermal Characteristics (Curves) Figure 7. Gat

AGM40P26E General DescriptionProduct SummaryThe AGM40P26E combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-40V 36m -5.8Aprotection applications.SOT23-3 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize

AGM40P26APTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -40 -- -- VGS DZero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM40P26S General DescriptionProduct SummaryThe AGM40P26S combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-40V 32m -6.0Aprotection applications.SOP8 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize co