AGM605F Datasheet. Specs and Replacement

Type Designator: AGM605F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 434 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO220F

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AGM605F datasheet

 ..1. Size:869K  cn agmsemi
 agm605f.pdf pdf_icon

AGM605F

AGM605F General Description Product Summary The AGM605F combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 4.5m 80A Features Advance high cell density Trench technology TO-220F Pin Configuration Low R to minimize... See More ⇒

 8.1. Size:1885K  cn agmsemi
 agm605a.pdf pdf_icon

AGM605F

AGM605A General Description Product Summary The AGM605A combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 4.4m 80A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to minimiz... See More ⇒

 8.2. Size:1166K  cn agmsemi
 agm605c.pdf pdf_icon

AGM605F

AGM605C General Description Product Summary The AGM605C combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 4.5m 80A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimize ... See More ⇒

 8.3. Size:1208K  cn agmsemi
 agm605q.pdf pdf_icon

AGM605F

AGM605Q Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =25... See More ⇒

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Detailed specifications: AGM602C, AGM6035A, AGM6035F, AGM603C, AGM603D, AGM603F, AGM605A, AGM605C, AON6414A, AGM605Q, AGM606S, AGM6070A, AGM6080C, AGM6080D, AGM608C, AGM412D, AGM412MAP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.