All MOSFET. AGM605F Datasheet

 

AGM605F Datasheet and Replacement


   Type Designator: AGM605F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 434 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220F
 

 AGM605F substitution

   - MOSFET ⓘ Cross-Reference Search

 

AGM605F Datasheet (PDF)

 ..1. Size:869K  cn agmsemi
 agm605f.pdf pdf_icon

AGM605F

AGM605F General DescriptionProduct SummaryThe AGM605F combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 4.5m80A FeaturesAdvance high cell density Trench technologyTO-220F Pin Configuration Low R to minimize

 8.1. Size:1885K  cn agmsemi
 agm605a.pdf pdf_icon

AGM605F

AGM605A General DescriptionProduct SummaryThe AGM605A combines advanced trenchMOSFET to providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 4.4m80A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin Configuration Low R to minimiz

 8.2. Size:1166K  cn agmsemi
 agm605c.pdf pdf_icon

AGM605F

AGM605C General DescriptionProduct SummaryThe AGM605C combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 4.5m80A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to minimize

 8.3. Size:1208K  cn agmsemi
 agm605q.pdf pdf_icon

AGM605F

AGM605QTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I =25

SHOW MORE

Datasheet: AGM602C , AGM6035A , AGM6035F , AGM603C , AGM603D , AGM603F , AGM605A , AGM605C , AON6414A , AGM605Q , AGM606S , AGM6070A , AGM6080C , AGM6080D , AGM608C , , .

History: AGM605Q | AGM608C | AGM6080C | AGM6080D | AGM606S

Keywords - AGM605F MOSFET datasheet

 AGM605F cross reference
 AGM605F equivalent finder
 AGM605F lookup
 AGM605F substitution
 AGM605F replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.