AGM435E Datasheet. Specs and Replacement
Type Designator: AGM435E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 92 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOT23
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AGM435E datasheet
agm435e.pdf
AGM435E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =... See More ⇒
Detailed specifications: AGM420MBA, AGM420MC, AGM420MD, AGM425M, AGM425MA, AGM425MC, AGM425MD, AGM425ME, AON7410, AGM500P20D, AGM502, AGM55N15A, AGM55N15D, AGM55P10A, AGM55P10D, AGM55P10S, AGM6014A
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History: DSB190N10L3 | AP01N40J
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