AP2012S Datasheet. Specs and Replacement

Type Designator: AP2012S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: SOP8

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AP2012S datasheet

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Detailed specifications: AP1605, AP1606, AP180N03G, AP18P30Q, AP2003, AP200N04, AP200N04D, AP2012, 8N60, AP2022S, AP2035G, AP2035Q, AP2045KD, AP2055K, AP2080KA, AP2080Q, AP20N06T

Keywords - AP2012S MOSFET specs

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