AP2317SD Datasheet. Specs and Replacement

Type Designator: AP2317SD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

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AP2317SD datasheet

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AP2317SD

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AP2317SD

AP2317GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 52m D Surface Mount Device ID - 4.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resist... See More ⇒

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AP2317SD

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AP2317SD

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Detailed specifications: AP20N06T, AP20N100Q, AP20P30S, AP2301B, AP2310, AP2316, AP2317A, AP2317QD, EMB04N03H, AP2318A, AP2335, AP25N06K, AP25N06Q, AP25P06K, AP25P06Q, AP25P30Q, AP2714QD

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