All MOSFET. AP25N06Q Datasheet

 

AP25N06Q Datasheet and Replacement


   Type Designator: AP25N06Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: PDFN3X3

 AP25N06Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP25N06Q Datasheet (PDF)

 ..1. Size:725K  allpower
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AP25N06Q

 7.1. Size:1968K  allpower
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AP25N06Q

 8.1. Size:1696K  cn apm
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AP25N06Q

AP25N04S 40V N-Channel Enhancement Mode MOSFET Description The AP25N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =40V I =25A DS DR

 8.2. Size:1494K  cn apm
ap25n04d.pdf pdf_icon

AP25N06Q

AP25N04D 40V N-Channel Enhancement Mode MOSFET Description The AP25N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =25A DS DR

Datasheet: AP2310 , AP2316 , AP2317A , AP2317QD , AP2317SD , AP2318A , AP2335 , AP25N06K , AO4407A , AP25P06K , AP25P06Q , AP25P30Q , AP2714QD , AP2714SD , , , .

History: AP2714QD | AP25P06Q | AP25P06K | AP2714SD | AP25N06K | AP25P30Q

Keywords - AP25N06Q MOSFET datasheet

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