AP25P30Q Datasheet. Specs and Replacement
Type Designator: AP25P30Q 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 21.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 346 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: PDFN3.3X3.3-8L
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AP25P30Q substitution
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AP25P30Q datasheet
ap25p15gi.pdf
AP25P15GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -140V Simple Drive Requirement RDS(ON) 95m Fast Switching Characteristic ID -23A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒
ap25p15gs-hf.pdf
AP25P15GS-HF RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -140V Simple Drive Requirement RDS(ON) 95m Fast Switching Characteristic ID -23A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒
Detailed specifications: AP2317QD, AP2317SD, AP2318A, AP2335, AP25N06K, AP25N06Q, AP25P06K, AP25P06Q, AO4468, AP2714QD, AP2714SD, AP2716KD, AP2716QD, AP2716SD, AP2N65K, AP3002S, AP3003
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