AP3002S Datasheet. Specs and Replacement
Type Designator: AP3002S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 393 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SOP8
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AP3002S datasheet
ap300n04tlg5.pdf
AP300N04TLG5 40V N-Channel Enhancement Mode MOSFET Description The AP300N04TLG5 uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =300A DS D R ... See More ⇒
Detailed specifications: AP25P06Q, AP25P30Q, AP2714QD, AP2714SD, AP2716KD, AP2716QD, AP2716SD, AP2N65K, IRF540N, AP3003, AP3004S, AP3065SD, AP30H150G, AP30H150K, AP30H150Q, AP30H180K, AP30H220G
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