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AP30H60K Spec and Replacement


   Type Designator: AP30H60K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO252

 AP30H60K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP30H60K Specs

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Detailed specifications: AP3003 , AP3004S , AP3065SD , AP30H150G , AP30H150K , AP30H150Q , AP30H180K , AP30H220G , IRF640N , AP30H80K , AP30N03K , AP30N04K , AP30P06 , AP30P06K , AP3100A , , .

Keywords - AP30H60K MOSFET specs

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