AP30N03K MOSFET: N-Ch, 30V, 30A. Full specification with pinout and replacement list

..1. Size:1972K allpower
ap30n03k.pdf pdf_icon

7.1. Size:1290K cn apm
ap30n03df.pdf pdf_icon

AP30N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP30N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS D R ... See More ⇒

8.1. Size:808K allpower
ap30n04k.pdf pdf_icon

... See More ⇒

8.2. Size:1427K cn apm
ap30n06df.pdf pdf_icon

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R ... See More ⇒

8.3. Size:1476K cn apm
ap30n06y.pdf pdf_icon

AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R ... See More ⇒

8.4. Size:1645K cn apm
ap30n06p ap30n06t.pdf pdf_icon

AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R ... See More ⇒

8.5. Size:1207K cn apm
ap30n06d.pdf pdf_icon

AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS D R ... See More ⇒

8.6. Size:1316K cn apm
ap30n02d.pdf pdf_icon

AP30N02D 20V N-Channel Enhancement Mode MOSFET Description The AP30N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =30A DS D R = 11m @ V =4.5V DS(ON) GS Application ... See More ⇒

AP30N03K Specs

Keywords - AP30N03K MOSFET specs

LIST

Last Update

Popular searches

AllTransistors(C)