AP30P06K Datasheet. Specs and Replacement

Type Designator: AP30P06K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 251 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO252

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AP30P06K datasheet

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AP30P06K

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AP30P06K

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AP30P06K

AP30P06D -60V P-Channel Enhancement Mode MOSFET Description The AP30P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-30A DS D R ... See More ⇒

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AP30P06K

AP30P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP30P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-30A DS D R ... See More ⇒

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Detailed specifications: AP30H150Q, AP30H180K, AP30H220G, AP30H60K, AP30H80K, AP30N03K, AP30N04K, AP30P06, 10N60, AP3100A, AP3101A, AP3134N5, AP3139, AP3205, AP3404, AP3404S, AP3415E

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