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AP3N50F Specs and Replacement


   Type Designator: AP3N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220F
 

 AP3N50F substitution

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AP3N50F Specs

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AP3N50F

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AP3N50F

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AP3N50F

AP3N50D 500V N-Channel Enhancement Mode MOSFET Description The AP3N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera... See More ⇒

Detailed specifications: AP3101A , AP3134N5 , AP3139 , AP3205 , AP3404 , AP3404S , AP3415E , AP3912GD , AON7408 , AP3N50K , , , , , , , .

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