ZXMN6A11Z Datasheet. Specs and Replacement
Type Designator: ZXMN6A11Z 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 330 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SOT89
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ZXMN6A11Z substitution
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ZXMN6A11Z datasheet
zxmn6a11z.pdf
ZXMN6A11Z 60V SOT89 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.120 @ VGS= 10V 3.6 60 0.180 @ VGS= 4.5V 2.9 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resistanc... See More ⇒
zxmn6a11z.pdf
ZXMN6A11Z www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise... See More ⇒
zxmn6a11zta.pdf
A Product Line of Diodes Incorporated ZXMN6A11Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance ID max Low Threshold V(BR)DSS RDS(on) Max TA = 25 C (Note 5) Fast Switching Speed 120m @ VGS = 10V 3.6A Low Gate Drive 60V 180m @ VGS = 4.5V 2.9A Lead Free/RoHS Compliant (Note 1) "Green... See More ⇒
Detailed specifications: ZXMN6A08E6, ZXMN6A08G, ZXMN6A08K, ZXMN6A09DN8, ZXMN6A09G, ZXMN6A09K, ZXMN6A11DN8, ZXMN6A11G, TK10A60D, ZXMN6A25DN8, ZXMN6A25G, ZXMN6A25K, ZXMN6A25N8, ZXMN7A11G, ZXMN7A11K, BSS123Z, BSS123W
Keywords - ZXMN6A11Z MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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