AP40P04Q PDF Specs and Replacement
Type Designator: AP40P04Q
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: PDFN3X3
AP40P04Q substitution
AP40P04Q PDF Specs
ap40p04df.pdf
AP40P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R ... See More ⇒
Detailed specifications: AP4688S , AP4008SD , AP4013S , AP40N06K , AP40N100K , AP40N100LK , AP40P04G , AP40P04K , 5N65 , AP40P05 , , , , , , , .
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility




