AP80N06T Datasheet. Specs and Replacement

Type Designator: AP80N06T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.3 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO251

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AP80N06T datasheet

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AP80N06T

AP80N06D 60V N-Channel Enhancement Mode MOSFET Description The AP80N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80 A DS D R ... See More ⇒

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Detailed specifications: AP6802, AP6900, AP70N100K, AP70P03K, AP75N04K, AP7N10K, AP80N06DH, AP80N06H, IRL3713, AP80P04K, AP85N04G, AP85N04K, AP85N04Q, AP85P04G, AP90N03GD, AP90N04G, AP90N04K

Keywords - AP80N06T MOSFET specs

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