AP85N04G Datasheet. Specs and Replacement

Type Designator: AP85N04G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 396 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: PDFN5X6-8L

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AP85N04G datasheet

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AP85N04G

AP85N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP85N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS D R ... See More ⇒

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Detailed specifications: AP70N100K, AP70P03K, AP75N04K, AP7N10K, AP80N06DH, AP80N06H, AP80N06T, AP80P04K, IRFZ24N, AP85N04K, AP85N04Q, AP85P04G, AP90N03GD, AP90N04G, AP90N04K, AP90N04Q, AP90P03K

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