APG068N04Q Datasheet. Specs and Replacement

Type Designator: APG068N04Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 254 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: PDFN3X3-8L

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Detailed specifications: APG045N85D, APG046N01G, APG050N85, APG050N85D, APG054N10, APG054N10D, APG060N85D, APG068N04G, IRF630, AO3480, AO3481C, AOB29S50L, AOB380A60L, AOK033V120X2, AOK033V120X2Q, AOK065V120X2, AOK065V65X2

Keywords - APG068N04Q MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility