AOK033V120X2 Datasheet. Specs and Replacement

Type Designator: AOK033V120X2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40.5 nS

Cossⓘ - Output Capacitance: 128 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: TO247

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AOK033V120X2 datasheet

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AOK033V120X2

ALPHA & OMEGA AOK033V120X2 SEMICONDUCTOR 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary Proprietary SiC MOSFET technology V @ T 1200 V DS J,max Low loss, with low R DS(ON) I 120 A DM Fast switching with low R and low capacitance G R 33 m DS(ON),typ Optimized gate drive voltage (V = 15 V) GS Q 226 nC rr Low reverse recovery diod... See More ⇒

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AOK033V120X2

ALPHA & OMEGA AOK033V120X2Q SEMICONDUCTOR 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary Proprietary SiC MOSFET technology V @ T 1200 V DS J, max Low loss, with low R DS, ON I 120 A DM Fast switching with low R and low capacitance G R 33 m DS(ON), typ Optimized gate drive voltage (V = 15 V) GS Q 226 nC rr Low reverse recovery d... See More ⇒

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AOK033V120X2

AOK031A60FD TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 304A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: APG054N10D, APG060N85D, APG068N04G, APG068N04Q, AO3480, AO3481C, AOB29S50L, AOB380A60L, AON7408, AOK033V120X2Q, AOK065V120X2, AOK065V65X2, AOK500V120X2, AOM033V120X2, AOM065V120X2Q, AONV070V65G1, AOTF11S60L

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