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AS6004 Specs and Replacement

Type Designator: AS6004

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: SOT23

AS6004 substitution

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AS6004 datasheet

 ..1. Size:1719K  anbon
 as6004.pdf pdf_icon

AS6004

AS6004 P-Channel Enhancement Mode MOSFET Product Summary V R I (BR)DSS DS(on)MAX D 120m @-10V -60V -4A 170m @-4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23-3L Marking 60P04Y XXXXX http //www.anbonsemi.com Document I... See More ⇒

Detailed specifications: AONS66966 , AOSN21319C , AOSS62934 , AON5802 , 2N7002KH , 2N7002KM , AS2310A , 2N7002EY , IRFZ24N , ADG120N080G2 , ADQ120N080G2 , ADW120N080G2 , ASA50R130E , ASA60R090EFD , ASA60R090EFDA , ASA60R150E , .

History: ADG120N080G2 | ADQ120N080G2

Keywords - AS6004 MOSFET specs

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